DESIGN AND OPTIMIZATION OF A 7.7 GHZ RF POWER AMPLIFIER USING GAN HEMT TRANSISTOR ON ROGERS 5880LZ SUBSTRATE
DOI:
https://doi.org/10.62985/j.huit_ojs.vol26.no2E.384Từ khóa:
RF power amplifier, GaN HEMT, Rogers 5880LZ, impedance matching, unconditional stabilityTóm tắt
This paper presents the design and simulation of a radio-frequency (RF) power amplifier operating at a center frequency of 7.7 GHz using a GaN HEMT transistor NP2500MS manufactured by Win Semiconductor on a Rogers 5880LZ substrate. The amplifier operates in Class-AB mode and employs input and output matching networks. To ensure unconditional stability, a 9.1 Ω resistor connected in series with the gate and paralleled with a 0.5-pF capacitor is introduced. Simulation results obtained using Keysight Advanced Design System (ADS) demonstrate that the proposed amplifier satisfies the design requirements, achieving S11 < −10 dB, S22 < −7.88 dB, S21 = 16.55 dB, a bandwidth of 6.9%, a maximum output power of 17.59 dBm, and DC power consumption below 0.3 W.
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